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Dr Haitao Ye

Dr Haitao Ye

Senior Lecturer

Electrical, Electronic & Power Engineering (EEPE)

Profile
I joined School of Engineering and Applied Science at Aston University in 2009, having spent the previous four years as Research Associate / Senior Research Associate at London Centre for Nanotechnology and Deputy Group Leader of Diamond Electronic Group at University College London (UCL). Prior to that, I spent one year at NTT Basic Research Labs in Japan and was an Industrial Research Fellow.

Qualifications & Education

  • PhD in Electronic Engineering, University College London

Employment

  • 2011 – now:  Senior Lecturer in Nanotechnology, School of Engineering and Applied Science, Aston University
  • 2009 – 2011: Lecturer in Nanotechnology, School of Engineering and Applied Science, Aston University.
  • 2008 – 2009: Deputy Group Leader and Senior Research Fellow, London Centre for Nanotechnology, University College London.
  • 2005 – 2008: Research Fellow, London Centre for Nanotechnology
  • 2004 – 2005: Industrial Research Fellowship, NTT Corporation, Japan.
  • 2003 – 2004: Postdoctoral Research Associate, University College London

Teaching activity

  • EE3NPD Network Product Development (BEng Third Year)
  • EE7002 Electronic Sensors (MSc Sensing)
  • SE0EEF & ME1600 Electronic Lab (Foundation Year & First Year)

Research interests

  • CVD homo-epitaxial and heteroepitaxial diamond films growth
  • Wear resistive nanodiamond coatings for Advanced Engineering Application
  • Surface functionalisation of nanodiamond powders for cold water cleaning
  • Nanodiamond particles for drug delivery
  • Materials characterisation (XPS, AES, Impedance, SEM, Raman, PL, FTIR, XRD)
  • Semiconductor devices fabrications (UV detector, FET, IGBT)
  • Electrospun carbon fibers and composites

Recent research funding

  • Nanodiamond additives for Cold Water Cleaning. EPSRC Grant (EP/H034269/1) with Procter & Gamble Ltd.
  • Nanodiamond Coatings for Advanced Engineering Application, EPSRC Nanotechnology Knowledge Transfer Network Industrial PhD Case Studentship, with Miba Group (formerly Teer Coatings Ltd.)
  • Diamond Power Devices for Aerospace Applications. UK-China Fellowship for Excellence, UK DBIS
  • Nanodiamond Fibers for Biomedical Applications. Daiwa Anglo-Japanese Foundation
  • Electrospun Nanodiamond Fibers, British Council Windsor Treaty Programme
  • Marie Curie FP7-People-IRSES, CarbonNASA (295208)
  • Marie Curie FP7-People-IIF, CNTBUS (207193)
  • Advantage West Midland
Awards and Honors
  • Royal Academy of Engineering Research Exchange Award with China/India
  • Royal Society International Short Visiting Award
  • British Council Science Exchange Award
  • UCL Graduate School Research Funds
  • NTT Corporation Industrial Research Fellowship
  • National Chinese Scholar Research Award
  • KC Wong Education Foundation Award
  • ORS Award

PhD Supervision

We are always willing to consider suitably qualified people as candidates for PhDs at Aston. If you have (or be close to completing) a first or upper second class honours degree, preferably with a Master’s degree with an appropriate background in electronic engineering, physics, materials science or electrochemistry, with an interest in nanotechnology, please contact us. Funding could be available from grant awarding bodies, such as the EPSRC, and University’s studentship may also be available.

There are also occasional vacancies for postdoctoral researchers, but these will be advertised below when they are available.  Experience in one of the following areas will be of advantage: (1) PECVD thin film growth, materials characterization using XPS, AES, SEM, and Raman spectroscopy; (2) Electronic device fabrication using clean room facilities including photolithography, RIE, and FIB; and (3) Electrochemistry including impedance spectroscopy, dielectric relaxation, and potentiostatic measurement. 

Membership of Professional Bodies

  • Editorial Board, Nanoscience & Nanotechnology Letters (www.aspbs.com/nnl/)
  • Scientific Review Panel Member, Israel Science Foundation
  • Reviewer for Journal of Physics D: Applied Physics /Journal of Physics: Condensed Matter / Diamond & Related Materials / Semiconductor Science & Technology / Nanotechnology /Physica Status Solidi /Materials Research Society Proceedings
  • Member of Institute of Physics, UK
  • Member of Institution of Engineering and Technology, UK
  • Member of Institute of Materials, Minerals and Mining, UK
  • Member of Materials Research Society, USA

Selected publications

  • C. J. Tang, I. Abe, A.J.S. Fernandes, M.A. Neto, L.P. Gu, S. Pereira, H. Ye, X.F. Jiang, and J. L. Pinto, Diamond and Related Materials 20 (2011) 304-309.
  • J. Li, X.Yi, and H.Ye, Carbon 48 (2010) 4574-77.
  • M. Bevilacqua, N. Tumilty, C. Mitra, H. Ye, T. Feygelson, J. Butler and R. B. Jackman, J. of Appl. Phys. 107 (2010) 033716-8.
  • N.Tumilty, J. Welch, H.Ye, R. Lang, C. Wort, R. Balmer and R. B. Jackman Observation of multiple conduction paths in boron δ-doped diamond structures, Applied Physics Letters 94 (2009) 052107-052109.
  • M. Bevilacqua, S. Patel, A. Chaudhary, H. Ye, R. B.Jackman, Electrical properties of aggregated detonation nanodiamonds, Applied Physics Letters 93 (2008) 132115-132117.
  • H.Ye, N.Tumilty, M.Bevilacqua, S.Curat, and R.B.Jackman, Electronic properties of homoepitaxial (111) highly boron-doped diamond films, Journal of Applied Physics, 103 (2008) 054503-054505.
  • H. Ye, N. Tumilty, D. Garner, and R Jackman, Device simulation and design optimization for diamond based insulator-gated bipolar transistors, Materials Research Society Proceedings 956 (2007) 275-280.
  • H. Ye, M. Kasu, Y. Yamauchi, N. Maeda, S. Sasaki, and T. Makimoto, Temperature dependent DC & RF performance of diamond MESFET, Diamond and Related Materials 15 (2006) 787-791.
  • M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki, and T. Makimoto, High RF output power for H-terminated diamond FETs, Diamond and Related Materials 15 (2006) 783-786.
  • H. Ye, M. Kasu, Y. Yamauchi, N. Maeda, S. Sasaki, and T. Makimoto, RF performance of diamond MESFET at elevated temperatures and its equivalent circuit analysis, Japanese Journal of Applied Physics 45 (2006) 3609-3613.
  • M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, N. Maeda, S. Sasaki, and T. Makimoto, 2W/mm out-put power density at 1GHz for Diamond FETs, IEE Electronics Letters 41 (2005) 1249-1250.
  • S. Curat, H. Ye, O. Gaudin, R. Jackman, and S. Koizomi, An impedance spectroscopic study of n-type phosphorus doped diamond, Journal of Applied Physics 98 (2005) 073701-073706.
  • H. Ye, O Gaudin, and R.B. Jackman, Ac impedance behaviour of black diamond films, Journal of Materials Science and Technology, 21 (2005) 879-882.
  • H. Ye, H. Yan, and R.B. Jackman, Dielectric properties of single crystalline diamond, Semiconductor Science & Technology 20 (2005) 296-298. 

Patent

  • UK patent No: GB1004715.7, 2010, pending.